A 3.3 V 72.2 Mbit/s 802.11n WLAN transformer-based power amplifier in 65 nm CMOS
نویسندگان
چکیده
This paper describes the design of a power amplifier (PA) for 802.11n WLAN fabricated in 65nm CMOS technology. The PA utilizes 3.3V thick gate oxide (5.2nm) transistors and a twostage differential configuration with integrated transformers for input and interstage matching. A methodology used to extract the layout parasitics from electromagnetic (EM) simulations is described. For a 72.2Mbit/s, 64-QAM, 802.11n OFDM signal at an average and peak output power of 11.6dBm and 19.6dBm, respectively, the measured EVM is 3.8%. The PA meets the spectral mask up to an average output power of 17dBm. Keywords-CMOS, power amplifier, transformers, wireless LAN
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Special issue on selected papers from NORCHIP 2013
This special issue is composed of papers from the 26th NORCHIP conference that was held in Tallinn, Estonia on November 17–18, 2008. The NORCHIP conference is the main microelectronics event of the Nordic and Baltic countries. The technical program of NORCHIP 2008 contained 61 papers, divided into 16 regular sessions and two poster sessions and was attended by almost 100 participants. Selected ...
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